Andy Zhong


Toshikazu Nishida

College of College of Engineering

Major: Electrical Engineering

Minor: N/A 

Research Interests: Devices

Academic Awards: Emerging Scholars Program 2016



Hobbies and Interests: Swimming, reading, bowling

Research Description:

Characterization of Nonvolatile Ferroelectric Memory Devices

Ferroelectric nonvolatile memory devices serve as a potential alternative to traditional FLASH nonvolatile memory devices because of their lower write power and much greater cycling endurance. However, ferroelectric memory devices typically have a lower storage capacity than traditional memory devices. Thus, there is a need to investigate the fundamental characteristics of ferroelectric material in order to better understand how ferroelectric memory devices can be improved.